长晶JSCJ 沟槽型MOSFET
共 31 个型号，漏源电压VDS 500~900V
按封装：
| 型号 | 封装 | TYPE | PROCESS | ESD | VDS(V) | VGS(V) | ID(A) | 规格书 |
|---|---|---|---|---|---|---|---|---|
| CJU04N65 | TO-252-2L | Single-N | Planar | No | 650 | ±30 | 4 | |
| CJP04N65 | TO-220-3L | Single-N | Planar | No | 650 | ±30 | 4 | |
| CJPF10N65 | TO-220F | Single-N | Planar | No | 650 | ±30 | 10 | |
| CJPF08N65 | TO-220F | Single-N | Planar | No | 650 | ±30 | 8 | |
| CJPF07N65 | TO-220F | Single-N | Planar | No | 650 | ±30 | 7.4 | |
| CJPF05N65 | TO-220F | Single-N | Planar | No | 650 | ±30 | 5 | |
| CJPF04N65 | TO-220F | Single-N | Planar | No | 650 | ±30 | 4 | |
| CJD04N65 | TO-251S | Single-N | Planar | No | 650 | ±30 | 4 | |
| CJU02N60M1 | TO-252-2L | Single-N | Planar | No | 600 | ±30 | 2 | |
| CJU04N65M1 | TO-252-2L | Single-N | Planar | No | 650 | ±30 | 4 | |
| CJP07N65M1 | TO-220-3L | Single-N | Planar | No | 650 | ±30 | 7 | |
| CJPF07N65M1 | TO-220F-B | Single-N | Planar | No | 650 | ±30 | 7 | |
| CJP07N65M1E | TO-220-3L | Single-N | Planar | No | 650 | ±30 | 7 | |
| CJP10N65M1E | TO-220-3L | Single-N | Planar | No | 650 | ±30 | 10 | |
| CJPF07N65M1E | TO-220F-B | Single-N | Planar | No | 650 | ±30 | 7 | |
| CJPF10N65M1 | TO-220F-B | Single-N | Planar | No | 650 | ±30 | 10 | |
| CJPF10N65M1E | TO-220F-B | Single-N | Planar | No | 650 | ±30 | 10 | |
| CJU04N65M1E | TO-252-2L | Single-N | Planar | No | 650 | ±30 | 4 | |
| CJP03N90M1 | TO-220-3L | Single-N | Planar | No | 900 | ±30 | 3 | |
| CJP04N50M1 | TO-220-3L | Single-N | Planar | No | 500 | ±30 | 4 | |
| CJP07N50M1 | TO-220-3L | Single-N | Planar | No | 500 | ±30 | 7 | |
| CJPF04N65M1 | TO-220F-B | Single-N | Planar | No | 650 | ±30 | 4 | |
| CJPF07N80M1 | TO-220F-B | Single-N | Planar | No | 800 | ±30 | 7 | |
| CJPF10N80M1 | TO-220F-B | Single-N | Planar | No | 800 | ±30 | 10 | |
| CJU02N50M1 | TO-252-2L | Single-N | Planar | No | 500 | ±30 | 2 | |
| CJU04N50M1 | TO-252-2L | Single-N | Planar | No | 500 | ±30 | 4 | |
| CJU07N50M1 | TO-252-2L | Single-N | Planar | No | 500 | ±30 | 7 | |
| CJPF10N50M1 | TO-220F-B | Single-N | Planar | No | 500 | ±30 | 10 | |
| CJP12N65M1 | TO-220-3L | Single-N | Planar | No | 650 | ±30 | 12 | |
| CJPF12N65M1 | TO-220F-B | Single-N | Planar | No | 650 | ±30 | 12 | |
| CJU05N60M1D | TO-252-2L | Single-N | Planar | No | 600 | ±30 | 5 |
长晶JSCJ 沟槽型MOSFET产品介绍
长晶科技（JSCJ）沟槽型MOSFET系列目前共有 31 个在售型号， 漏源电压VDS范围覆盖 500V 至 900V， 封装形式涵盖 to-220-3l、to-220f、to-220f-b、to-251s、to-252-2l 等多种规格， 适用于消费电子、通信设备、工业控制、新能源等多个应用领域。
本页面列出了长晶JSCJ全部 沟槽型MOSFET 型号的电气参数规格，每个型号均提供原厂数据手册（Datasheet）PDF下载。 如需选型咨询或批量报价，欢迎通过企业微信联系南山电子技术团队。